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2023 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)

The 15th International Memory Workshop (IMW) took place at the Hyatt Regency Hotel in Monterey, CA, from 21-24 May 2023. After the fully virtual 2020 and 2021 editions, and the hybrid 2022 edition held in Dresden, this year’s IMW was the first on-site only after the Covid pandemic, returning to the true interactive Workshop format.

The IMW is sponsored by the IEEE Electron Devices Society and meets annually in May. The workshop is a unique forum for specialists in all aspects of semiconductor memories (non-volatile & volatile). The scope of workshop content ranges from new memory concepts in early research to the technology drivers currently in volume production as well as emerging technologies in development. The technical sessions are organized in a manner that provides ample time for informal exchanges among presenters and attendees. More than 150 people took part in our meeting this year.

This year’s program included a one-day short course, with tutorials on TCAD and Modeling and on DNA memory, delivered by experts on the topics from both the industry and academia. The technical program for single-track conference spanned three days and opened with keynote talks by Alessandro Gorsso (Infineon) on RRAM technology for automotive, Jeongdong Choe (TechInsights) on the status of STT-MRAM technology, and Sunil Sim (Samsung) on 3D NAND Flash.

The program included invited talks given by experts in memory field – Wei-Chen Chen (Macronix), Konrad Seidel (Fraunhofer), Biswajit Ray (Univ. Alabama), Antonio Conte (ST Microelectronics), Bhagwati Prasad (Indian Institute of Science Bangaluru), Sebastian Couet (imec), and Bala Haran (Applied Materials) - providing an exciting overview of the main trends for memory technologies and applications. 

The IMW is also an excellent forum to present new and original technical works and this year’s technical program comprised 31 excellent papers, which included 17 oral presentations and 14 posters. The papers were selected by the technical committee among more than 59 papers submitted and covered the major categories of memory technologies (3D NAND, 3D DRAM, Ferroelectric, STT, RRAM, PCM, and selectors) and NVM applications (Automotive, In-memory and Neuromorphic Computing).

Among the exciting news presented at the conference, the paper titled “Process improvements for the 7th generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production” presented by Soochan Kyle Chung (Samsung) won the Best Paper Award, and the paper “ Proposal of P-channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND” presented by Song-hyeon Kuk (Korean Advanced Institute of Science and Technology) received the Best Student Paper Award. 

Another highlight of the conference was the panel discussion on the topic “Can 3D structuring be a technology driver for memory like it was for NAND?”, hosted by Tomoya Sanuki (Kioxia).

The next IMW will be held in May 2024 in Seoul, South Korea.

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