Society Brief - September 2023
 
 
 
 
Publications
 
 
 
 
Free to IEEE EDS Members!
 
 


You will receive the print version of the new IEEE Electron Devices Magazine for 2024 as a bonus to continue celebrating the 75th year anniversary of the transistor at no additional cost.
 
 
 
 
 
 
Podcast
 
 
 
 
EDS Podcast - Professor Marvin White
 
 
 
 
Listen to the latest EDS Podcast from one of EDS' Luminaries - Professor Marvin White
 
 
 
 
 
 
Event
 
 
 
 
Mena-SC 2023 Early Bird Registration Extended
 
 
 
 
 
 
Awards
 
 
 
 
EDS Region 9 Biennial Outstanding Student Paper Award
 
 
Submit your nomination today!
 
 
 
 
 
 
2022 IEEE EDS Paul Rappaport Award Winner Selected
 
 
A high priority of the Electron Devices Society (EDS) is to recognize and enhance the quality of papers published in EDS archival literature. Every year, the Society confers its prestigious Paul Rappaport Award to the best paper published in the IEEE Transactions on Electron Devices. Among other criteria including technical excellence, an important metric for selection for the award is comprehensive and impartial referencing of prior art.

The winning paper was selected from over 1,084 articles that were published in 2022. The winning paper is entitled “InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz.” This paper was published in the April 2022 issue of the IEEE Transactions on Electron Devices, and was authored by Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. Bolognesi.

The award will be presented during the IEEE EDS International Electron Devices Meeting to be held in December 2023. In addition to the award certificate, the authors will receive a check for US$2,500 to be shared equally among all authors. On behalf of the Electron Devices Society, I would like to congratulate the authors for this achievement. Brief biographies of some of the authors follow.
 
 
 
 
 
 
2022 IEEE EDS George E. Smith Award Winner Selected
 
 
A high priority of the Electron Devices Society (EDS) is to recognize and enhance the quality of papers published in EDS archival literature. The George E. Smith Award was established in 2002 to recognize the best paper appearing in a fast turnaround archival publication of EDS, targeted to the IEEE Electron Device Letters. Among other criteria including technical excellence, an important metric for selection for the award is comprehensive and impartial referencing of prior art. The paper winning the 2022 George E. Smith Award was selected from over 506 articles that were published in 2022.

The paper is entitled, “Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array.” This paper appeared in the December 2022 issue of the IEEE Electron Device Letters and authored by Sourav De, Franz Müller, Nellie Laleni, Maximilian Lederer, Yannick Raffel, Shaown Mojumder, Alptekin Vardar, Sukhrob Abdulazhanov, Tarek Ali, Stefan Dünkel, Sven Beyer, Konrad Seidel, and Thomas Kämpfe.

The award will be presented during the IEEE EDS International Electron Devices Meeting to be held in December 2023. In addition to the award certificate, the authors will receive a check for US$2,500 to be shared equally among all authors. On behalf of the Electron Devices Society, I would like to congratulate the authors for this achievement.
 
 
 
 
 
 
2022 IEEE EDS Leo Esaki Award Winner Announced
 
 
The Leo Esaki Award was established in 2019 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE Journal of Electron Devices Society. Among other criteria including technical excellence The paper winning the 2022 Leo Esaki Award was selected from over 144 articles that were published in 2022.

The paper is entitled, “Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model." This paper appeared in the November 2021 issue of the IEEE Journal of the Electron Devices Society and authored by Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, and Masaharu Kobayashi.

The award will be presented during the IEEE EDS International Electron Devices Meeting to be held in December 2023. In addition to the award certificate, the authors will receive a check for US$2,500 to be shared equally among all authors. On behalf of the Electron Devices Society, I would like to congratulate the authors for this achievement.
 
 
 
 
 
 
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